MMBT5401 |
RFQ for MMBT5401 Required Field |
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| Technical/Catalog Information | MMBT5401 |
| Vendor | Fairchild Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 10mA |
| Frequency - Transition | 300MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23 |
| Packaging | Digi-Reel? |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | MMBT5401 MMBT5401 MMBT5401FSDKR ND MMBT5401FSDKRND MMBT5401FSDKR |
| Product | Manufacturers | Pack | D/C |
| MMBT5401 | - | SOT-23 | 04+ |
Features |
| Epitaxial Planar Die ConstructionComplementary NPN Type Available (MMBT5551) Ideal for Medium Power Amplification and Switching |
| Characteristic | Symbol | MMBT5401 | Unit |
| Collector-Base Voltage | VCBO | -160 | V |
| Collector-Emitter Voltage | VCEO | -150 | V |
| Emitter-Base Voltage | VEBO | -5.0 | V |
| Collector Current - Continuous (Note 1) | IC | -200 | mA |
| Power Dissipation (Note 1) | Pd | 300 | mW |
| Thermal Resistance, Junction to Ambient (Note 1) | RJA | 417 | /W |
| Operating and Storage and Temperature Range | Tj, TSTG | -55 to +150 |
